2sc5550 2004-07-26 1 toshiba transistor silicon npn triple diffused type 2sc5550 high-speed switching application for inverter lighting system ? suitable for rcc circuit (guaranteed small current h fe ) : h fe = 13 (min) (i c = 1 ma) ? high speed: t r = 0.5 s (max), t f = 0.3 s (max) (i c = 0.24 a) ? high breakdown voltage: v ceo = 400 v maximum ratings (tc = 25c) characteristics symbol rating unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7 v dc i c 1 collector current pulse i cp 2 a base current i b 0.5 a ta = 25c 1.5 collector power dissipation tc = 25c p c 10 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c unit: mm jedec D jeita D toshiba 2-8h1a weight: 0.82 g (typ.)
2sc5550 2004-07-26 2 electrical characteristics (tc = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 320 v, i e = 0 D D 100 a emitter cut-off current i ebo v eb = 7 v, i c = 0 D D 100 a collector-base breakdown voltage v (br) cbo i c = 1 ma, i e = 0 400 D D v collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 400 D D v h fe (1) v ce = 5 v, i c = 1 ma 13 D D dc current gain h fe (2) v ce = 5 v, i c = 0.04 a 20 D 65 collector-emitter saturation voltage v ce (sat) i c = 0.2 a, i b = 25 ma D D 1.0 v base-emitter saturation voltage v be (sat) i c = 0.2 a, i b = 25 ma D D 1.3 v rise time t r D D 0.5 storage time t stg D D 5.0 switching time fall time t f i b1 = 0.03 a, i b2 = ? 0.06 a, duty cycle 1% D D 0.3 s marking i b1 20 s v cc 200 v 833 ? i b2 i b1 input i b2 i c output c5550 part no. (or abbreviation code) lot no. a line indicates lead (pb)-free package or lead (pb)-free finish.
2sc5550 2004-07-26 3 collector-emitter saturation voltage v ce (sat) (v) base-emitter saturation voltage v be (sat) (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe v be (sat) ? i c collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v ce (sat) ? i c base-emitter saturation voltage v be (sat) (v) v be (sat) ? i c collector current i c (a) collector current i c (a) 0 1.2 0 2 4 6 10 12 8 0.4 0.8 1.6 2 common emitter tc = 25c 800 1400 200 1000 50 100 400 600 i b = 20 ma 1200 0.001 0.1 0.3 1 30 0.01 0.03 1 tc = ? 55c 25 100 0.003 0.1 0.3 3 10 3 common emitter i c /i b = 8 0.001 0.1 0.3 1 30 0.01 0.03 1 tc = ? 55c 25 100 0.003 0.1 0.3 3 10 3 common emitter i c /i b = 2 0.001 1 3 10 300 0.01 0.03 1 common emitter v ce = 5 v tc = ? 55c 25 100 0.003 0.1 0.3 3 100 30 common emitter i c /i b = 8 0 0 tc = 100c 25 ? 55 10 2 4 6 0.2 0.4 0.6 0.8 8 common emitter i c /i b = 2 tc = 100c 25 ? 55 2 4 6 8 10 0 0 0.8 1.2 1.6 0.4 2
2sc5550 2004-07-26 4 collector-emitter voltage v ce (v) safe operating area collector current i c (a) i c ? v be collector current i c (a) base-emitter voltage v be (v) 0 0.4 0.8 1.2 2.4 2 0 0.8 1.6 100 25 tc = ? 55c 2 1.2 0.4 1.6 common emitter v ce = 5 v 0.03 1 0.01 0.1 1 10 1000 *: single nonrepetitive pulse tc = 2 5 c curves must be derated linearly with increase in temperature. i c max (pulsed)* i c max (continuous) dc operation tc = 25c 10 ms* 1 ms* 100 ms* v ceo max 3 0.3 3 30 100 300 10 0.003 0.001 100 s* 10 s*
2sc5550 2004-07-26 5 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliab ility or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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